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• Группа компьютерного моделирования наноструктур и биосистем

Группа компьютерного моделирования наноструктур и биосистем

INTAS Project No 03-51-3967

• Riga Technical University - Latvia
  
• Institute of Crystallography - Russia
  
• Institute of Mathematical Problems of Biology - Russia
  
• Saarland University - Germany
  

The project will develop and explore novel ultrathin ferroelectric (FE) Langmuir- Blodgett (LB) films, consisted of several molecular monolayers, fabricated from copolymerP(VDF-TrFE) (70/30) demonstrating a switching phenomena at a nanometer size scale to provide a ferroelectric local reversal polarization at a atomic-molecular scale. Preparations and studies of these new nano-materials will be carried out both experimentally and theoretically at the following approaches:

fabrication of multi-layers and domain structure of homogeneous ultrathin FE LB copolymer films as well as possible recognition of a domain size at the critical structural FE scale,
fabrication of both monolayer and multi-layer composite structure of heterogeneous FE LB copolymer ultrathin films , embedding insulator layers as well as situated on the semiconductors substrate,
formation of a composite ultrathin LB FE-semiconductors structure,
aging and degradation processes of all prepared structures.

surface properties and atomic-molecular structural alterations will be studied owing to STM and exoelectron emission technique,
high resolution time technique will applied on electrical characterization, polarization and conductance switching and others transients processes ,
computational modeling and simulation will be directed to all proposed models and mechanisms at both at the microscopic quantum-chemical scale l and for the condensed matter continuum.

novel nano-sized ultrathin copolymer FE LB based materials for nano- technological and molecular electronic applications will be reached,
new fundamental molecular mechanism of FE switching in the ultrathin FE LB films will be explored,
new computational technology and software for modeling and preparation of various FE LB structures and nano-devices will abe achieved, The results are planned for implementation for molecular electronics and nanotechnologies needs. New benefits in applications of nano-devices, such as completely new memory devices, will be challenged.